Bridging the gap between Bulk Semiconductors and Atomic Systems using Intelligent Based Techniques

Martin Ogharandukun 1 & Ngang Bassey Ngang 2
1 Department of Pure and Applied Physics, Veritas University, Abuja, Nigeria
2 Department of Electrical and Electronic Engineering, Veritas University, Abuja

Abstract

Adding atomic systems with bulk semiconductors can advance electronic devices with higher functionalities. However, maintaining control over the distinct properties of both systems during integration presents substantial challenges. This paper examines the use of intelligent base techniques as a solution to bridge the gap between atomic systems and bulk semiconductors. By manipulating material properties, these techniques enable controlled interactions, facilitating the development of customized materials and devices. The causes of this gap, which impacts industries reliant on computers and mobile devices, such as material property discrepancies, quantum effects at the nanoscale, interface interactions, and limitations in fabrication and predictive modeling are also examined. The study proposes a framework involving the characterization of these issues, the design of a conventional SIMULINK model, the development of intelligent rule-based systems, and the training of artificial neural networks (ANNs) to mitigate the gap. Simulation results show a reduction in material property discrepancies from 30% to 24.68%, quantum effects from 25% to 20.57%, and fabrication challenges from 10% to 8.23% when using intelligent base techniques. Overall, the method achieved an improvement of 1.77% in bridging the gap between bulk semiconductors and atomic systems.

Keywords: Bulk Semiconductors; Intelligent Based Techniques; Atomic Systems; Material Properties

Cite as:
Ogharandukun, O. & Ngang, N. B. (2025). Bridging the gap between Bulk Semiconductors and Atomic Systems using Intelligent Based Techniques. International Journal of Nanotechnology and Engineering Applications, 5(1), 1-16. https://doi.org/10.5281/zenodo.14792249 © 2025 The Author(s). International Journal of Nanotechnology and Engineering Applications published by ACADEMIC INK REVIEW.


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